A Si Memory Device Composed of a One-Dimensional Metal-Oxide-Semiconductor Field-Effect-Transistor Switch and a Single-Electron-Transistor Detector
A Si Memory Device Composed of a One-Dimensional Metal-Oxide-Semiconductor Field-Effect-Transistor Switch and a Single-Electron-Transistor Detector
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一种由一维金属氧化物半导体场效应晶体管开关和单电子晶体管探测器组成的硅存储器件
DOI：
10.1143/jjap.38.2457
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发表时间：
1999
影响因子：
1.5
通讯作者：
K. Murase
中科院分区：
文献类型：
--
作者：
Yasuo Takahashi;A. Fujiwara;K. Yamazaki;H. Namatsu;K. Kurihara;K. Murase
提出了一种由小型一维硅线MOS场效应晶体管（FET）和单电子晶体管（SET）组成的新型硅存储器件，并对其在40 K下的基本特性进行了研究。小硅SET是通过图案依赖氧化（PADOX），这是几乎完全兼容的硅MOSLSI工艺。尽管沟道非常短，但1D MOSFET提供非常陡峭的亚阈值斜率，其非常接近室温下的物理极限。这保证了低电压操作以及小尺寸。该存储器器件使用1D MOSFET作为用于向存储器节点传输电子和从存储器节点传输电子的开关。极少量的存储电子由高灵敏度SET静电计检测。该器件可以用极少量的电子工作，这确保了超低功率和高速运行。
A novel Si memory device composed of a small one-dimensional (1D) Si-wire metal-oxide-semiconductor (MOS) field-effect transistor (FET) and a single-electron transistor (SET) is proposed, and its fundamental characteristics at 40 K are demonstrated. The small Si SET is fabricated by means of pattern-dependent oxidation (PADOX), which is almost completely compatible with Si MOSLSI processes. The 1D MOSFET provides a very steep subthreshold slope that is very close to the physical limit at room temperature in spite of the very short channel. This guarantees low voltage operation as well as small size. The memory device uses a 1D MOSFET as a switch for electrons transported to and from the memory node. The very small number of stored electrons is detected by a highly sensitive SET electrometer. The device can operate with an extremely small number of electrons, which assures ultralow-power and high-speed operation.