Bulk quadrupole and interface dipole contribution for second harmonic generation in Si(111)
Bulk quadrupole and interface dipole contribution for second harmonic generation in Si(111)
复制标题
体四极子和界面偶极子对 Si(111) 二次谐波产生的贡献
DOI：
10.1088/2040-8978/18/3/035501
复制
发表时间：
2016
影响因子：
2.1
通讯作者：
H. Hardhienata
中科院分区：
文献类型：
--
作者：
Cornelia Reitböck;D. Stifter;A. Alejo;K. Hingerl;H. Hardhienata
在旋转各向异性实验中，测量了Si（111）表面上任意取向的线性输入偏振的二次谐波响应。我们表明，第一次，使用简化的键超极化率模型（SBHM），所观察到的非线性峰和对称性特征的角位移相关的输入极化的变化，有助于识别相应的接口偶极和散装四极SHG源，产生良好的协议与实验。此外，我们评估的s-in/p-out（sp）和p-in/p-out（pp）-偏振二次谐波强度的贡献，从个别的Si键。此外，从SBHM产生的四个参数和六个系数的唯象SHG理论需要重现实验数据之间的关系被建立。
The second harmonic generation (SHG) response was measured for arbitrarily oriented linear input polarization on Si(111) surfaces in rotational anisotropy experiments. We show for the first time, using the simplified bond hyperpolarizability model (SBHM), that the observed angular shifts of the nonlinear peaks and symmetry features—related to changes in the input polarization—help to identify the corresponding interface dipolar and bulk quadrupolar SHG sources, yielding excellent agreement with the experiment. Additionally, we evaluate for the s-in/p-out (sp) and p-in/p-out (pp)-polarization SHG intensities the contributions from the individual Si bonds. Furthermore, a relation between the four parameters arising from SBHM and six coefficients of the phenomenological SHG theory needed to reproduce experimental data is established.