Redox Reactions at Colloidal Semiconductor Nanocrystal Surfaces
Redox Reactions at Colloidal Semiconductor Nanocrystal Surfaces
复制标题
DOI：
10.1021/acs.chemmater.3c00481
复制
发表时间：
2023-04
影响因子：
8.6
通讯作者：
Keaton V. Prather;Jonathan T. Stoffel;Emily Y. Tsui
中科院分区：
文献类型：
--
作者：
Keaton V. Prather;Jonathan T. Stoffel;Emily Y. Tsui
胶体半导体纳米晶体（NC）在显示器、光致发光和荧光等应用中的适应性主要依赖于NC材料的核心电子结构，其产生期望的光电子性质，如宽吸收和尺寸可调发射。然而，在局部NC表面站点的还原或氧化事件可以极大地影响样品的稳定性和器件的效率，有助于NC降解和载流子捕获。了解当地的组成，结构和电化学电位的氧化还原活性NC表面网站继续提出了一个挑战。在这个角度来看，我们讨论如何NC表面还原，氧化和静电有助于NC电子性能，包括光致发光淬灭或增亮和NC带边电位的变化，等等。最近的努力相结合的光谱，电化学和计算方法来表征氧化还原活性的表面位点和陷阱状态的突出，包括在该领域的发展方法和未来的机会。
The adaptation of colloidal semiconductor nanocrystals (NCs) in applications like displays, photovoltaics, and photocatalysis relies primarily on the core electronic structure of NC materials that give rise to desirable optoelectronic properties like broad absorption and size-tunable emission. However, reduction or oxidation events at localized NC surface sites can greatly affect sample stability and device efficiencies by contributing to NC degradation and carrier trapping. Understanding the local composition, structure, and electrochemical potentials of redox-active NC surface sites continues to present a challenge. In this perspective, we discuss how NC surface reduction, oxidation, and electrostatics contribute to NC electronic properties that include photoluminescence quenching or brightening and shifts in NC band edge potentials, among others. Recent efforts toward combining spectroscopic, electrochemical, and computational methods to characterize redox-active surface sites and trap states are highlighted, including developing methods in the field and future opportunities.