Temperature Dependence of Avalanche Breakdown in InP and InAlAs
Temperature Dependence of Avalanche Breakdown in InP and InAlAs
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DOI：
10.1109/jqe.2010.2044370
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发表时间：
2010-08-01
影响因子：
2.5
通讯作者：
David, John Paul Raj
中科院分区：
文献类型：
--
作者：
Tan, Lionel Juen Jin;Ong, Daniel Swee Guan;David, John Paul Raj
本文给出了InP或InAlAs雪崩光电二极管击穿电压温度系数的简单解析表达式。在20 ~ 375 K温度范围内，测量了一系列InP和InAlAs二极管的雪崩击穿电压随温度的变化关系。虽然雪崩击穿电压对于两种材料的雪崩区厚度变得更加温度敏感，但与InP二极管相比，InAlAs二极管对温度变化不太敏感。
Simple analytical expressions for temperature coefficients of breakdown voltage of avalanche photodiodes (APDs) utilizing InP or InAlAs are reported. The work is based on measurements of temperature dependence of avalanche breakdown voltage in a series of InP and InAlAs diodes at temperatures between 20 and 375 K. While avalanche breakdown voltage becomes more temperature sensitive with avalanche region thickness for both materials, the InAlAs diodes are less sensitive to temperature changes compared to InP diodes.