Interface Engineering of Molecular Charge Storage Dielectric Layers for Organic Thin‐Film Memory Transistors
Interface Engineering of Molecular Charge Storage Dielectric Layers for Organic Thin‐Film Memory Transistors
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DOI：
10.1002/admi.201400238
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发表时间：
2014-12
影响因子：
5.4
通讯作者：
A. Khassanov;T. Schmaltz;Hans‐Georg Steinrück;A. Magerl;A. Hirsch;M. Halik
中科院分区：
文献类型：
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作者：
A. Khassanov;T. Schmaltz;Hans‐Georg Steinrück;A. Magerl;A. Hirsch;M. Halik
A. Khassanov，T. Schmaltz，Prof. Halik有机材料和器件（OMD）埃尔兰根-纽伦堡大学材料科学系Martensstrasse 7，91058，埃尔兰根，德国电子邮件：marcus. fau.de H.- G. Steinrück，Prof. Erlangen-Nürnberg Staudtstrasse 3，91058，埃尔兰根，德国，Magerl晶体学和结构物理学大学Hirsch化学与药学系Erlangen-Nürnberg大学Henkestrasse 42，91054，埃尔兰根，德国DOI：10.1002/adm.201400238 C 60 -存储单元到半导体通道的距离的影响。通过应用C60官能化分子和绝缘烷基分子的混合自组装膜，可以调节电荷分散。[ 5 ]由于SAM的特定设计和电介质-半导体界面的完美控制，与先前的工作相比，可以将存储器器件的保留时间提高3个数量级。[五]《中国日报》
A. Khassanov, T. Schmaltz, Prof. Dr. M. Halik Organic Materials and Devices (OMD) Department of Materials Science University Erlangen-Nürnberg Martensstrasse 7 , 91058 , Erlangen , Germany E-mail: marcus.halik@fau.de H.-G. Steinrück, Prof. Dr. A. Magerl Crystallography and Structural Physics University Erlangen-Nürnberg Staudtstrasse 3 , 91058 , Erlangen , Germany Prof. Dr. A. Hirsch Department of Chemistry and Pharmacy University Erlangen-Nürnberg Henkestrasse 42 , 91054 , Erlangen , Germany DOI: 10.1002/admi.201400238 of the impact of distance of the C 60 -memory unit to the semiconductor channel. By applying mixed SAMs of C 60 -functionalized molecules and insulating alkyl molecules the charge dispersion can be tuned. [ 5 ] Due to the specifi c design of the SAMs and the perfect control of the dielectric-semiconductor interface it is possible to improve the retention time of memory devices by 3 orders of magnitude compared to previous work. [ 5 ]