A Novel Gate Driver for Active Voltage Balancing in 1.7kV Series Connected SiC MOSFETs
A Novel Gate Driver for Active Voltage Balancing in 1.7kV Series Connected SiC MOSFETs
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用于 1.7kV 串联 SiC MOSFET 中有源电压平衡的新型栅极驱动器
DOI：
10.1109/apec.2019.8722176
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发表时间：
2019
期刊：
影响因子：
--
通讯作者：
S. Bhattacharya
中科院分区：
文献类型：
--
作者：
Sanket Parashar;S. Bhattacharya
本文提出了串联 1.7 kV SiC MOSFET 的主动电压平衡方法。 1.7 kV SiC MOSFET 的串联连接因其高开关速度和更高的可靠性而有可能取代中压 IGBT (4.5 kV)。由于桥臂配置中可能存在电压失配、电压尖峰和器件电流尖峰，SiC MOSFET 的串联具有挑战性。引入了一种新颖的门控技术来减少 di/dt 引起的电压失配和电压尖峰。实验结果通过两个 SiC MOSFET 的串联进行，并通过理论计算进行验证。
This paper addresses active voltage balancing method for series connected 1.7 kV SiC MOSFETs. The series connection of 1.7 kV SiC MOSFETs have potential to replace medium voltage IGBTs (4.5 kV) due to their high switching speed and improved reliability. Series connection of SiC MOSFET is challenging due to possibility of voltage mismatch, voltage spike and device current spike in leg configuration. A novel gating technique has been introduced to reduce the voltage mismatch and voltage spike due to di/dt. Experimental results have been performed with series connection of two SiC MOSFETs and validated with theoretical calculations.