Demonstration of midinfrared type-II InAs/GaSb superlattice photodiodes grown on GaAs substrate
Demonstration of midinfrared type-II InAs/GaSb superlattice photodiodes grown on GaAs substrate
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DOI：
10.1063/1.3148326
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发表时间：
2009-06
影响因子：
4
通讯作者：
B. Nguyen;D. Hoffman;E. Huang;S. Bogdanov;P. Delaunay;M. Razeghi;M. Tidrow
中科院分区：
文献类型：
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作者：
B. Nguyen;D. Hoffman;E. Huang;S. Bogdanov;P. Delaunay;M. Razeghi;M. Tidrow
我们报道了在GaAs衬底上生长的II型InAs/GaSb超晶格光电二极管的生长和表征。通过降低成核温度和生长速率，在GaAs衬底上获得了具有清晰原子台阶和低粗糙度形貌的光滑GaSb表面。在GaSb缓冲层上生长了p ~+-i-n ~+ Ⅱ型InAs/GaSb超晶格光电二极管，设计截止波长为4 μm。该探测器在77 K时的零偏压微分电阻（R 0A）超过1600 Ω cm 2，量子效率为36.4%，比探测率为6×1011 cmHz/W，本底极限工作温度为100 K，本底温度为300 K。非制冷探测器的性能与GaSb衬底上的探测器相似，载流子寿命为110 ns，探测率为6×108 cmHz/W。
We report the growth and characterization of type-II InAs/GaSb superlattice photodiodes grown on a GaAs substrate. Through a low nucleation temperature and a reduced growth rate, a smooth GaSb surface was obtained on the GaAs substrate with clear atomic steps and low roughness morphology. On the top of the GaSb buffer, a p+-i-n+ type-II InAs/GaSb superlattice photodiode was grown with a designed cutoff wavelength of 4 μm. The detector exhibited a differential resistance at zero bias (R0A) in excess of 1600 Ω cm2 and a quantum efficiency of 36.4% at 77 K, providing a specific detectivity of 6×1011 cmHz/W and a background limited operating temperature of 100 K with a 300 K background. Uncooled detectors showed similar performance to those grown on GaSb substrates with a carrier lifetime of 110 ns and a detectivity of 6×108 cmHz/W.