Identification of Si and Ge atoms by atomic force microscopy
Identification of Si and Ge atoms by atomic force microscopy
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DOI：
10.1103/physrevb.92.155309
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发表时间：
2015-10
影响因子：
3.7
通讯作者：
Jo Onoda;Kohei Niki;Y. Sugimoto
中科院分区：
文献类型：
--
作者：
Jo Onoda;Kohei Niki;Y. Sugimoto
我们成功地识别单个Ge和Si原子在intermixedsurfaces的力谱使用原子力显微镜在室温下。具有高化学反应性的尖端在最大吸引力的直方图中显示来自Ge和Si的不同峰。Ge上的最大吸引力与Si上的最大吸引力之比取0.84的恒定值，与尖端无关。我们将本方法应用于表面，以阐明最顶层的元素组成。
We successfully identify individual Ge and Si atoms on intermixedsurfaces by force spectroscopy using atomic force microscopy at room temperature. Tips with high chemical reactivity show distinct peaks derived from Ge and Si in the histograms of maximum attractive forces. The ratio of the maximum attractive force on Ge to that on Si takes a constant value of 0.84 independently of the tips. We apply the present method tosurfaces to elucidate the elemental composition of the topmost layer.