Resistance Reduction Induced by Small Electric Current in CoCu Porous Films
Resistance Reduction Induced by Small Electric Current in CoCu Porous Films
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DOI：
10.1021/jp910749b
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发表时间：
2010-01
影响因子：
3.7
通讯作者：
Zhigang Li;W. Cai;Peisheng Liu;Qintao Li;L. Zou
中科院分区：
文献类型：
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作者：
Zhigang Li;W. Cai;Peisheng Liu;Qintao Li;L. Zou
以双层胶体模板为基础，采用电化学沉积法在镀有氧化铟锡的玻璃衬底上制备了铁磁性CoCu多孔薄膜。电学研究发现，在这些铁磁多孔膜中，小电流可以引起电阻降低。当电流密度一定时，电阻减小：从初始值到稳态值，高磁场下的电阻小于低磁场下的电阻。对于固定的磁场，较小的电流密度导致较长的弛豫时间。电阻降低值和弛豫时间可以通过外加磁场和电流密度来控制。提出了一个可能的模型，在低电流密度下的电流驱动的磁畴壁的运动来解释这种CoCu多孔膜的还原行为，这将有非常有价值的应用在磁延迟开关。
The ferromagnetic CoCu porous films were prepared by electrochemical deposition based on the double layered colloidal template on indium tin oxide-coated glass substrates. The investigation of electrics discovered that resistance reduction could be induced by a small electric current in these ferromagnetic porous films. For fixed current density, the resistance decreased: from initial state value to steady state one, it was smaller at high magnetic field than that at low field. For a fixed magnetic field, a smaller current density led to longer relaxation time. The resistance reduction value and relaxation time can be controlled by the external magnetic field and current density. A possible model of the current-driven movement of domain walls in low current density is proposed to explain reduction behaviors in such CoCu porous film and this will have highly valuable applications in magnetic delay switches.