Hysteretic metal-ferroelectric-semiconductor capacitors based on PZT/ZnO heterostructures
Hysteretic metal-ferroelectric-semiconductor capacitors based on PZT/ZnO heterostructures
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DOI：
10.1088/0022-3727/40/8/003
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发表时间：
2007-04-21
影响因子：
3.4
通讯作者：
Phillips, J. D.
中科院分区：
文献类型：
--
作者：
Cagin, E.;Chen, D. Y.;Phillips, J. D.
铁电材料与半导体材料的界面连接为将铁电材料的独特性质与高性能半导体器件耦合提供了一种手段。在这项工作中，我们报道了铁电/ZnO异质结构的电子特性，其中（Pb，Zr）TiO₃（PZT）被用作一种典型的铁电氧化物。金属 - PZT - 金属结构展示出铁电滞后现象，在15V的回路中，剩余极化强度为28 μC/cm²，矫顽场为75 kV/cm。金属 - PZT - ZnO电容器结构展示出一种具有约4V滞后记忆窗口的金属 - 绝缘体 - 半导体电容 - 电压（C - V）特性。异质结构的C - V特性随频率变化不显著。金属 - PZT - ZnO电容器也被用作一个简单RLC电路的一部分，以证明通过切换铁电极化来改变电路谐振频率的能力。
Interfacing of ferroelectric and semiconductor materials provides a means of coupling unique properties associated with ferroelectric materials to high performance semiconductor devices. In this work we report the electronic properties of ferroelectric/ZnO heterostructures, where (Pb, Zr) TiO3 (PZT) is used as a prototypical ferroelectric oxide. Metal-PZT-metal structures demonstrate ferroelectric hysteresis with remanent polarization of 28 mu C cm(-2) and coercive field of 75 kV cm(-1) for a loop of 15V. The metal-PZT-ZnO capacitor structures demonstrate a characteristic metal-insulator-semiconductor capacitance-voltage (C-V) behaviour with a hysteretic memory window of approximately 4V. The heterostructure C-V characteristics do not change significantly with varying frequency. Metal-PZT-ZnO capacitors are also used as part of a simple RLC circuit to demonstrate the ability to shift resonant frequency of the circuit with switching ferroelectric polarization.