MOCVD growth of MgSe thin films on GaAs substrates
MOCVD growth of MgSe thin films on GaAs substrates
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DOI：
10.1016/s0022-0248(97)00426-0
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发表时间：
1998-01-01
影响因子：
1.8
通讯作者：
Liu, NH
中科院分区：
文献类型：
--
作者：
Jiang, FY;Liao, QH;Liu, NH
MgSe thin films have been grown by metal-organic chemical vapor deposition on GaAs substrates. Our experimental results show that the crystal structure of MgSe depends strongly on both the growth temperature and the substrate orientation. Using the X-ray diffraction technique, we observed the three phases of MgSe; the rock salt, wurtzite and zincblende structures. The lattice constant of zincblende MgSe was determined to be 5.96 Angstrom. (C) 1998 Elsevier Science B.V. All rights reserved.
