Fabrication of Cu2GeS3-based thin film solar cells by sulfurization of Cu/Ge stacked precursors
Fabrication of Cu2GeS3-based thin film solar cells by sulfurization of Cu/Ge stacked precursors
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DOI：
10.7567/jjap.53.05fw10
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发表时间：
2014-04
影响因子：
1.5
通讯作者：
H. Araki;Kotaro Chino;K. Kimura;Naoya Aihara;K. Jimbo;H. Katagiri
中科院分区：
文献类型：
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作者：
H. Araki;Kotaro Chino;K. Kimura;Naoya Aihara;K. Jimbo;H. Katagiri
通过热蒸发和硫化制备了不含 In 和 Se 的 Cu2GeS3 薄膜，并制备了玻璃/Mo/Cu2GeS3/CdS/ZnO:Al/Al 结构的光伏电池。所得到的膜的组成比在玻璃上为Cu/Ge＝1.96、S/金属＝0.92，在涂有Mo的玻璃基板上为Cu/Ge＝2.08、S/金属＝0.94。通过X射线衍射测量，硫化膜被鉴定为Cu2GeS3。通过光学测量，带隙能量估计为 1.5-1.6 eV。在可见光区域，Cu2GeS3 薄膜的光吸收系数约为 104 cm−1。使用Cu2GeS3薄膜制造的太阳能电池表现出380 mV的开路电压和1.70%的转换效率。
In- and Se-free Cu2GeS3 thin films were prepared by thermal evaporation followed by sulfurization, and photovoltaic cells with a glass/Mo/Cu2GeS3/CdS/ZnO:Al/Al structure were fabricated. The composition ratios of the obtained films were Cu/Ge = 1.96 and S/metal = 0.92 on glass, and Cu/Ge = 2.08 and S/metal = 0.94 on a Mo-coated glass substrate. By X-ray diffraction measurement, the sulfurized films were identified to be Cu2GeS3. By optical measurement, the band gap energy was estimated to be 1.5–1.6 eV. In the visible region, a Cu2GeS3 film has an optical absorption coefficient that is on the order of 104 cm−1. A solar cell fabricated using the Cu2GeS3 thin film exhibited an open-circuit voltage of 380 mV and a conversion efficiency of 1.70%.