Magnetic skyrmionium diode with a magnetic anisotropy voltage gating
Magnetic skyrmionium diode with a magnetic anisotropy voltage gating
复制标题
DOI:
10.1063/5.0025124
复制
发表时间:
2020-11
影响因子:
4
通讯作者:
Junlin Wang;J. Xia;Xichao Zhang;Xiangyu Zheng;Guanqiao Li;Li Chen;Yan Zhou;Jing Wu;H. Yin;R. Chantrell;Yongbing Xu
中科院分区:
文献类型:
--
作者:
Junlin Wang;J. Xia;Xichao Zhang;Xiangyu Zheng;Guanqiao Li;Li Chen;Yan Zhou;Jing Wu;H. Yin;R. Chantrell;Yongbing Xu
The magnetic skyrmionium can be seen as a coalition of two magnetic skyrmions with opposite topological charges and has potential applications in next-generation spintronic devices. Here, we report the current-driven dynamics of a skyrmionium in a ferromagnetic nanotrack with the voltage-controlled magnetic anisotropy. The pinning and depinning of a skyrmionium controlled by the voltage gate are investigated. The current-driven skyrmionium can be used to mimic the skyrmionium diode effect in the nanotrack with a voltage gate. We have further studied the skyrmionium dynamics in the nanotrack driven by a magnetic anisotropy gradient in the absence of spin current. The performance of a single wedge-shaped voltage gate at different temperatures is studied. Our results may provide useful guidelines for the design of voltage-controlled and skyrmionium-based spintronic devices.