Formation of ionic depletion/enrichment zones in a hybrid micro-/nano-channel
Formation of ionic depletion/enrichment zones in a hybrid micro-/nano-channel
复制标题
DOI：
10.1007/s10404-008-0281-9
复制
发表时间：
2008-11-01
影响因子：
2.8
通讯作者：
Yang, Ruey-Jen
中科院分区：
文献类型：
--
作者：
Huang, Kuan-Da;Yang, Ruey-Jen
本研究制作了一个十字形微芯片，其中两个侧通道通过纳米通道桥连接到主通道。在纳米通道的阳极侧和阴极侧上建立离子耗尽区和富集区。结果表明，在耗尽区的低电导率诱导快速的电渗流，这反过来又促使在耗尽区的涡流结构的产生。在这项研究中还证明了随着施加电压的增加，耗尽体电荷层的长度延长和扩散层的长度减少。
This study fabricates a cross-form microchip in which the two side channels are attached to the main channel via a nanochannel bridge. Ionic depletion and enrichment zones are established on the anodic and cathodic sides of the nanochannel. Results show that the low conductivity within the depletion zone induces a rapid electroosmotic flow, which in turn prompts the generation of vortex flow structures within the depletion zone. Both the lengthening of the depletion bulk charge layer and decrease in length of the diffusion layer as the applied voltage is increased are also demonstrated in this study.