Green light emission from the edges of organic single-crystal transistors
Green light emission from the edges of organic single-crystal transistors
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DOI：
10.1063/1.3504690
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发表时间：
2010-10-25
影响因子：
4
通讯作者：
Iwasa, Yoshihiro
中科院分区：
文献类型：
--
作者：
Yomogida, Yohei;Takenobu, Taishi;Iwasa, Yoshihiro
我们用1，4-双(5-苯基硫代-2-基)苯(AC5)单晶制成了双极发光场效应晶体管，具有35%的荧光量子效率。得到的空穴迁移率和电子迁移率分别为2.9×10(-1)cm(-1)/V S和6.7×10(-3)cm(2)/V S。这些是AC5晶体管中的最高值。重要的是，虽然晶体表面的光发射小于相机的探测水平，但我们从单晶的边缘观察到了明亮的偏振光发射。这种偏振边发射归因于强的自组装光限制性质和完美排列的跃迁偶极矩，这对未来的激光器件是有利的。(C)2010年美国物理研究所。[DOI：10.1063/1.3504690]
We have fabricated ambipolar light-emitting field-effect transistors made of 1,4-bis(5-phenylthiophen-2-yl)benzene (AC5) single crystals, which have 35% fluorescent quantum efficiency. The obtained hole and electron mobilities were 2.9 x 10(-1) cm(2)/V s and 6.7 x 10(-3) cm(2)/V s, respectively. These are the highest values among AC5 transistors. Importantly, although the light emission from the crystal surface was less than the detection level of the camera, we observed bright and polarized light emission from the edge of the single crystals. This polarized edge emission is attributed to the strong self-assembled light-confining nature and perfectly aligned transition dipole moments, which are advantageous for future laser devices. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3504690]