Electrooptic planar deflector switches with thin-film PLZT active elements
Electrooptic planar deflector switches with thin-film PLZT active elements
复制标题
带有薄膜 PLZT 有源元件的电光平面偏转器开关
DOI：
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发表时间：
2005
影响因子：
4.9
通讯作者：
M. Kato
中科院分区：
文献类型：
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作者：
A. Glebov;M.G. Lee;Lidu Huang;S. Aoki;K. Yokouchi;M. Ishii;M. Kato
在硅衬底上采用混合集成技术制备了第一个光电（EO）平面偏转开关（pds）原型。平面光学模块采用硅对硅技术制造，由相互面向的输入和输出（I/O）波导微透镜和中间的平板波导组成。这些模块将I/O光纤与宽度小于400 /spl mu/m的横向准直光束互连，距离可达100mm，损耗低于3db。在SrTiO/ sub3 /衬底上生长具有棱柱状电极的薄铅钛酸镧锆（PLZT）薄膜形成偏转元件。PLZT薄膜厚度大于10 /spl μ m， EO系数约为40 pm/V。偏转板组装技术提供芯片垂直定位精度优于1 /spl mu/m。偏转板芯片通过热压缩倒装芯片键合连接到光学基板上。采用测试硅片的模块光功率损耗可低至3.6 dB。然而，使用PLZT实现的最低模块损耗约为10 dB。通道到通道的开关操作被证明在大约40 V和开关时间小于500 ns。
First prototypes of electrooptic (EO) planar deflector switches (PDSs) are fabricated with hybrid integration on Si substrates. Planar optical modules, made in silica-on-silicon technology, consist of input and output (I/O) waveguide microlenses facing each other and slab waveguides in between. The modules interconnect the I/O fibers with laterally collimated light beams less than 400 /spl mu/m in width at distances up to 100 mm with losses lower than 3 dB. Thin lead lanthanum zirconium titanate (PLZT) films with prism-shaped electrodes grown on SrTiO/sub 3/ substrates form the deflector elements. The PLZT films are more than 10 /spl mu/m thick with EO coefficients about 40 pm/V. The deflector assembly technology provides chip vertical positioning accuracy better than 1 /spl mu/m. The deflector chips are attached to the optical substrates with thermo-compression flip-chip bonding. The optical power losses of the modules with test silica chips can be as low as 3.6 dB. However, the lowest module losses achieved with PLZT are about 10 dB. The channel-to-channel switching operations are demonstrated at about 40 V and switching times less than 500 ns.