High-frequency AlGaN/GaN HFETs with fT/fmax of 149/263 GHz for D-band PA applications
High-frequency AlGaN/GaN HFETs with fT/fmax of 149/263 GHz for D-band PA applications
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适用于 D 频段 PA 应用的 fT/fmax 为 149/263 GHz 的高频 AlGaN/GaN HFET
DOI：
10.1049/el.2016.1241
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发表时间：
2016-07-21
影响因子：
1.1
通讯作者：
Feng, Zhihong
中科院分区：
文献类型：
--
作者：
Lv, Yuanjie;Song, Xubo;Feng, Zhihong
在 SiC 衬底上制造并表征了具有高单位电流增益截止频率 (f(T)) 和最大振荡频率 (f(max)) 的按比例缩小的 AlGaN/GaN 异质结构场效应晶体管 (HFET)。在该器件中，通过采用非合金再生长 n(+)-GaN 欧姆接触，实现了 600 nm 的按比例缩小的源极到漏极距离 (L-sd)。 60 nm T 形 AlGaN/GaN HFET 在栅极凹进后表现出优异的直流和射频性能。 AlGaN/GaN HFET 获得了创纪录的 764 mS/mm 外在跨导 (g(m))。此外，所制造的器件在相同偏置下的最大f(T)和f(max)分别达到149和263 GHz，呈现出f(T)*f(max)的历史新高值。这表明，经过进一步优化，AlGaN/GaN HFET 仍具有 D 频段（110-170 GHz）功率放大器应用的潜力。
Scaled AlGaN/GaN heterostructure field-effect transistors (HFETs) with high unity current gain cut-off frequency (f(T)) and maximum oscillation frequency (f(max)) were fabricated and characterised on SiC substrate. In the device, scaled source-to-drain distance (L-sd) of 600 nm was realised by employing non-alloyed regrown n(+)-GaN ohmic contacts. A 60 nm T-shaped AlGaN/GaN HFETs showed excellent DC and RF performance after gate recess. A record extrinsic transconductance (g(m)) of 764 mS/mm was obtained in the AlGaN/GaN HFETs. Moreover, the maximum f(T) and f(max) of the fabricated device reach to 149 and 263 GHz at the same bias, exhibiting a record-high value of f(T)*f(max). This indicates that the AlGaN/GaN HFETs still have the potential for D-band (110-170 GHz) power-amplifier application with further optimisation.