Terahertz Small-Signal Response of Field-Effect Transistor Channels
Terahertz Small-Signal Response of Field-Effect Transistor Channels
复制标题
场效应晶体管通道的太赫兹小信号响应
DOI：
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发表时间：
2015
影响因子：
3.2
通讯作者：
L. Varani
中科院分区：
文献类型：
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作者：
F. Z. Mahi;H. Marinchio;C. Palermo;L. Varani
本文提出了一种研究太赫兹频率下纳米场效应晶体管小信号响应的解析方法。一维流体动力学方程与伪二维泊松方程相耦合，得到了描述晶体管的小信号导纳矩阵。然后使用该矩阵对加载的器件进行建模，并确定其电压放大。导纳和电压放大光谱显示出与通道的等离子体模式相关的尖锐共振。研究了器件几何形状、工作温度和连接负载对器件性能的影响。
In this paper, we present an analytical approach for the study of the small-signal response of nanometric field-effect transistor at terahertz frequencies. One-dimensional hydrodynamic equations coupled with a pseudo-two-dimensional Poisson equation are derived at first-order to obtain the small-signal admittance matrix describing the transistor. This matrix is then used to model the loaded device and establish its voltage amplification. The admittances and voltage amplification spectra exhibit sharp resonances associated with the plasma modes of the channel. The influences of the device geometry, operating temperature and connected load are investigated.