Chemical mechanical polishing of patterned copper wafer surface using water-soluble fullerenol slurry
Chemical mechanical polishing of patterned copper wafer surface using water-soluble fullerenol slurry
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DOI：
10.1016/j.cirp.2011.03.068
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发表时间：
2011-01-01
影响因子：
4.1
通讯作者：
Kokubo, K.
中科院分区：
文献类型：
--
作者：
Takaya, Y.;Kishida, H.;Kokubo, K.
Cu-CMP已成为实现高性能半导体器件的关键制造工艺。因此，开发了一种使用水溶性富勒烯醇浆料的新型Cu-CMP技术。实验结果表明，所提出的铜CMP技术实现了高的材料去除率和低凹陷性能的图案化铜晶片的抛光。XPS分析和SEM观察表明，这些有利的抛光性能是通过使用富勒烯醇作为抛光剂的化学效应实现的。富勒醇被发现与铜发生化学反应，形成复杂的脆性层，该层足够脆弱，可以通过用抛光垫摩擦来去除。(C)2011年CIRP。
Cu-CMP has become a key fabrication process by which high-performance semiconductor devices are realized. Therefore, a novel Cu-CMP technique using water-soluble fullerenol slurry was developed. The experimental results show that the proposed Cu-CMP technique realizes a high material removal rate and low dishing performance for the polishing of a patterned Cu-wafer. An XPS analysis and SEM observation showed that these advantageous polishing performances were achieved by the chemical effect of using fullerenol as a polishing agent. The fullerenol was found to chemically react with the copper to form a complex brittle layer which was fragile enough to be removed by rubbing with a polishing pad. (C) 2011 CIRP.