In Situ Dielectric Al 2 O 3 /β‐Ga 2 O 3 Interfaces Grown Using Metal–Organic Chemical Vapor Deposition
In Situ Dielectric Al 2 O 3 /β‐Ga 2 O 3 Interfaces Grown Using Metal–Organic Chemical Vapor Deposition
复制标题
使用金属有机化学气相沉积生长的原位电介质 Al 2 O 3 /β-Ga 2 O 3 界面
DOI：
10.1002/aelm.202100333
复制
发表时间：
2021
影响因子：
6.2
通讯作者：
Krishnamoorthy, Sriram
中科院分区：
文献类型：
--
作者：
Roy, Saurav;Chmielewski, Adrian E.;Bhattacharyya, Arkka;Ranga, Praneeth;Sun, Rujun;Scarpulla, Michael A.;Alem, Nasim;Krishnamoorthy, Sriram
高质量的电介质-半导体界面对于可靠的高性能晶体管至关重要。本文报道了在β-Ga 2 O3上原位金属有机化学气相沉积Al 2 O3作为最常用的原子层沉积（ALD）的潜在更好的替代方案。Al 2 O3的生长在与Ga 2 O3相同的反应器中进行，使用三甲基铝和O2作为前体，在600 °C的生长温度下不破坏真空。在金属氧化物半导体电容器（MOSCAP）结构上使用应力电容-电压（CV）测量来识别和量化Al 2 O3/β-Ga 2 O3界面处的快和慢近界面陷阱。利用紫外辅助CV技术测量了浅能级和深能级初始填充陷阱（Dit）的密度。MOSCAP的平均Dit为6.4× 1011 cm − 2 eV −1。Al_2O_3/Ga_2O_3界面的导带偏移也由CV测量确定，并发现为1.7 eV，这与ALD Al_2O_3/Ga_2O_3界面的现有文献报道密切一致。还分析了电流-电压特性，并提取出平均击穿场约为5.8 MV cm-1。这种在β-Ga 2 O3上原位生成的Al 2 O3电介质具有更好的介电性能，可以实现Ga 2 O3基高性能器件。
High quality dielectric‐semiconductor interfaces are critical for reliable high‐performance transistors. This paper reports the in situ metal–organic chemical vapor deposition of Al2O3on β‐Ga2O3as a potentially better alternative to the most commonly used atomic layer deposition (ALD). The growth of Al2O3is performed in the same reactor as Ga2O3using trimethylaluminum and O2as precursors without breaking the vacuum at a growth temperature of 600 °C. The fast and slow near interface traps at the Al2O3/β‐Ga2O3interface are identified and quantified using stressed capacitance–voltage (CV) measurements on metal oxide semiconductor capacitor (MOSCAP) structures. The density of shallow and deep level initially filled traps (Dit) are measured using ultraviolet‐assisted CV technique. The average Ditfor the MOSCAP is determined to be 6.4×1011cm−2eV−1. The conduction band offset of the Al2O3/ Ga2O3interface is also determined from CV measurements and found out to be 1.7 eV which is in close agreement with the existing literature reports of ALD Al2O3/Ga2O3interface. The current–voltage characteristics are also analyzed and the average breakdown field is extracted to be approximately 5.8 MV cm−1. This in situ Al2O3dielectric on β‐Ga2O3with improved dielectric properties can enable Ga2O3‐based high‐performance devices.