Growth mechanism and clustering phenomena: The Ge-on-Si system.
Growth mechanism and clustering phenomena: The Ge-on-Si system.
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生长机制和聚类现象：Ge-on-Si 系统。
DOI：
10.1103/physrevb.39.7848
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发表时间：
1989
期刊：
影响因子：
--
通讯作者：
Davidson
中科院分区：
文献类型：
--
作者：
Zinke;Feldman;Nakahara;Davidson
用离子散射和电子显微镜研究了沉积在Si上的Ge薄膜的团簇行为。沉积退火后的Ge显示集群根据奥斯特瓦尔德熟化机制。团簇体积随时间呈线性增长，团簇大小分布与理论预测一致。团簇形成过程中的低沉积速率进行了研究。这允许估计的限制应用Ostwald成熟的方法的非零沉积速率制度。
The clustering behavior of Ge thin films deposited on Si has been investigated by ion scattering and electron microscopy. Post-deposit-annealed Ge is shown to cluster according to an Ostwald ripening mechanism. The cluster-volume growth is linear in time, and the cluster-size distribution is in agreement with the theoretical prediction. Cluster formation during low deposition rates is also studied. This permits an estimate of the limit for the application of the Ostwald-ripening approach to the nonzero deposition-rate regime.