Quantum Hall effect of Weyl fermions in n-type semiconducting tellurene
Quantum Hall effect of Weyl fermions in n-type semiconducting tellurene
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DOI:
10.1038/s41565-020-0715-4
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发表时间:
2020-06-29
影响因子:
38.3
通讯作者:
Ye, Peide D.
中科院分区:
文献类型:
--
作者:
Qiu, Gang;Niu, Chang;Ye, Peide D.
Dirac and Weyl nodal materials can host low-energy relativistic quasiparticles. Under strong magnetic fields, the topological properties of Dirac/Weyl materials can directly be observed through quantum Hall states. However, most Dirac/Weyl nodes generically exist in semimetals without exploitable band gaps due to their accidental band-crossing origin. Here, we report the first experimental observation of Weyl fermions in a semiconductor. Tellurene, the two-dimensional form of tellurium, possesses a chiral crystal structure which induces unconventional Weyl nodes with a hedgehog-like radial spin texture near the conduction band edge. We synthesize high-quality n-type tellurene by a hydrothermal method with subsequent dielectric doping and detect a topologically non-trivial pi Berry phase in quantum Hall sequences. Our work expands the spectrum of Weyl matter into semiconductors and offers a new platform to design novel quantum devices by marrying the advantages of topological materials to versatile semiconductors.The accidental band-crossing origin of Weyl nodes paired with the absence of sizeable band gaps hampers the exploitation of low-energy relativistic quasiparticles in Weyl semimetals. In a gate-tunable high-quality tellurene film, quantum Hall measurements unveil a topologically non-trivial pi Berry phase caused by unconventional Weyl nodes in these tellurium two-dimensional sheets.