An Ultrathin Single Crystalline Relaxor Ferroelectric Integrated on a High Mobility Semiconductor
An Ultrathin Single Crystalline Relaxor Ferroelectric Integrated on a High Mobility Semiconductor
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DOI：
10.1021/acs.nanolett.7b02947
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发表时间：
2017-10-01
期刊：
影响因子：
10.8
通讯作者：
Ngai, Joseph H.
中科院分区：
文献类型：
--
作者：
Moghadam, Reza M.;Xiao, Zhiyong;Ngai, Joseph H.
多功能氧化物在半导体上的外延生长已经开辟了将新功能引入半导体器件技术的途径。特别地，在场效应晶体管中实现非易失性或滞后功能的栅极材料的集成可以导致消耗更少功率或允许计算中的新颖模态的器件技术。在这里，我们提出了电特性的单晶SrZrxTi 1-xO 3（x = 0.7）薄膜外延生长的高迁移率半导体，锗。SrZrxTi 1-xO 3外延膜表现出弛豫行为，其特征在于通过滞后极化，可以调制的Ge的表面电位。我们发现，栅极层薄至5 nm对应的等效氧化物厚度仅为1.0 nm表现出类似于2 V的滞后窗口中的电容-电压特性。具有纳米级栅极厚度的滞后金属氧化物半导体电容器的发展为纳米电子器件开辟了新的前景。
The epitaxial growth of multifunctional oxides on semiconductors has opened a pathway to introduce new functionalities to semiconductor device technologies. In particular, the integration of gate materials that enable nonvolatile or hysteretic functionality in field-effect transistors could lead to device technologies that consume less power or allow for novel modalities in computing. Here we present electrical characterization of ultrathin single crystalline SrZrxTi1-xO3 (x = 0.7) films epitaxially grown on a high mobility semiconductor, Ge. Epitaxial films of SrZrxTi1-xO3 exhibit relaxor behavior, characterized by a hysteretic polarization that can modulate the surface potential of Ge. We find that gate layers as thin as 5 nm corresponding to an equivalent-oxide thickness of just 1.0 nm exhibit a similar to 2V hysteretic window in the capacitance-voltage characteristics. The development of hysteretic metal-oxide-semiconductor capacitors with nanoscale gate thicknesses opens new vistas for nanoelectronic devices.