Comprehensive study on die shift and die protrusion issues during molding process of Mold-1st FOWLP
Comprehensive study on die shift and die protrusion issues during molding process of Mold-1st FOWLP
复制标题
Mold-1st FOWLP成型过程中模具移位和模具突出问题的综合研究
DOI：
10.1109/eptc.2018.8654399
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发表时间：
2018
期刊：
影响因子：
--
通讯作者：
Xiaowu Zhang
中科院分区：
文献类型：
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作者：
S. Lim;S. Chong;Lim Pei Siang Sharon;W. Seit;Xiaowu Zhang
扇出晶圆级封装（FOWLP）的引入是可行的方法之一，因为当前的封装技术正朝着低成本、多功能和小形状因子封装的方向发展[1]。FOWLP还提供良好的互连，因为它从芯片到薄涂层金属化层的互连较短[2]。然而，在FOWLP的制造中，很大程度上由模塑化合物引起的翘曲成为一个挑战[3]。硅芯片键合到载体上，并且芯片在封装期间从其原始键合位置移动，称为芯片移动。影响芯片移位的因素可能来自材料膨胀率、封装期间的拖曳力和模塑化合物收缩特性[4]。本文评估了FOWLP Mold-1st封装的3种不同配置，以研究配置和工艺参数对芯片移位的影响，以及组装过程中的芯片突出。DOE结合不同的键合力来研究它们的影响，并实现芯片移位，芯片突出的目标为$\pm 15 \mu \mathrm {m}$。总之，我们能够实现一个小的芯片移位，最小的芯片突出和最小的翘曲的成型晶圆上的FOWLP制造研究。
The introduction of Fan-Out Wafer-Level Packaging (FOWLP) is one of the viable approaches as the current packaging technology is moving towards low cost, multi-functions and small form factor packages [1]. FOWLP also offers good interconnects due to its shorter inter-connections from the chips to the thin-coated layer of metallization [2]. However, warpage largely induced from molding compound becomes a challenge in the fabrication of the FOWLP [3]. Silicon die bonded onto the carrier and the die shifted from its original bonded position during encapsulation known as die shifting. Factors affecting the die shift can be from material expansion rate, dragging force during encapsulation and the mold compound shrinkage properties [4].In this paper, we evaluated 3 different configurations of FOWLP Mold-1st packages to study the impact of the configuration and process parameters on die shifting, and die protrusion during the assembly process. DOE incorporating different bonding force is done to study their impact and to achieve a die shift, and die protrusion target of $\pm 15 \mu \mathrm {m}$.In summary, we are able to achieve a small die shift, minimum die protrusion and minimum warpage on the molded wafer for this FOWLP fabrication study.