Indium Compositional Homogeneity in In0.17Al0.83N Epilayers Grown by Metal Organic Chemical Vapor Deposition
Indium Compositional Homogeneity in In0.17Al0.83N Epilayers Grown by Metal Organic Chemical Vapor Deposition
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金属有机化学气相沉积生长的 In0.17Al0.83N 外延层中铟成分的均匀性
DOI：
10.1143/apex.5.101002
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发表时间：
2012-10-01
影响因子：
2.3
通讯作者：
Jin, Peng
中科院分区：
文献类型：
--
作者：
Wang, Jiaming;Xu, Fujun;Jin, Peng
采用阴极发光和光致发光的方法研究了In0.17Al0.83N薄膜中铟的空间分布特征。结果表明，In0.17Al0.83N具有良好的成分均匀性，这意味着几乎不存在导致成分不均匀的相分离。这一结果与InxGa1-xN合金的情况大不相同。基于温度-摩尔分数（T-x）相图分析，我们认为In0.17Al0.83N合金是亚稳的，不会发生局部分解。Al-N和In-N之间的共价键失配引起的高动能势垒被认为是实现这种亚稳态的原因。
The spatial distribution features of indium composition in In0.17Al0.83N epilayers have been investigated by means of cathodoluminescence and photoluminescence. It is demonstrated that there is excellent compositional homogeneity in In0.17Al0.83N, implying there is almost no phase separation that would cause compositional inhomogeneity. This result is quite different from the case in InxGa1-xN alloys. Based on the analysis of the temperature–mole fraction (T–x) phase diagram, we believe that the In0.17Al0.83N alloy is metastable against local decomposition. The high kinetic energy barrier caused by the considerable covalent bond mismatch between Al–N and In–N is supposed to account for the realization of such a metastable state.