Design and Optimization of 650V/60A Double-Sided Cooled Multichip GaN Module
Design and Optimization of 650V/60A Double-Sided Cooled Multichip GaN Module
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650V/60A双面冷却多芯片GaN模块的设计与优化
DOI：
10.1109/apec42165.2021.9487307
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发表时间：
2021
期刊：
影响因子：
--
通讯作者：
F. Luo
中科院分区：
文献类型：
--
作者：
A. Emon;Hayden Carlton;John G. Harris;Alexis Krone;A. Mirza;M. Hassan;Zhao Yuan;D. Huitink;F. Luo
与传统硅功率器件相比，宽带隙（WBG）半导体因其优越的材料特性而成为未来高性能电力电子能量转换的最终选择。氮化镓 (GaN) 高电子迁移率晶体管 (HEMT) 提供非常快速的开关能力，使设计人员能够将开关频率提高到 MHz 范围。传统器件封装成为充分利用这些先进功率器件优势的限制因素，因此，必须改进和先进的封装结构来弥合 GaN 器件与其应用之间的差距。采用协同设计、协同优化方法开发了双面冷却栅极驱动器集成 650V/60A GaN 半桥相脚功率模块。每个芯片的电源环路电感和热阻优化至 0.91 nH 和 0.31°C/W，并通过热仿真和实验结果进行了验证。
Wide bandgap (WBG) semiconductors have become the ultimate choice for future high-performance power electronics energy conversion due to their superior material properties compared to traditional silicon power devices. Gallium nitride (GaN) high electron mobility transistor (HEMT) offers very fast switching capability enabling the designer to push switching frequency to the MHz range. Traditional device packaging becomes a limiting factor in fully harnessing the benefits offered by these advanced power devices, and thus, improved and advanced packaging structures are a must to bridge the gap between GaN devices and their applications. A co-design, co-optimization method has been followed to develop a double-sided cooled, gate driver integrated 650V/60A GaN half-bridge phase-leg power module. Power loop inductance and thermal resistance per die is optimized to 0.91 nH and 0.31°C/W which is verified using thermal simulation and experimental result.