Coulomb blockade phenomena in electromigration break junctions
Coulomb blockade phenomena in electromigration break junctions
复制标题
电迁移断裂结中的库仑阻塞现象
DOI：
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发表时间：
2005
期刊：
影响因子：
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通讯作者：
K. Kern
中科院分区：
文献类型：
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作者：
R. Sordan;K. Balasubramanian;M. Burghard;K. Kern
通过金钯纳米线的电迁移诱导断裂制备了纳米间隙结构。应用低的断裂电压导致间隙结表现出单电子隧道签名在低温（2K），这是由于在电迁移过程中形成的金属纳米团簇。引人注目的是，大多数样品的I-V特性显示出与通常归因于通过掺入电迁移间隙接触的单分子的电传输的那些特性密切相似。在未来的分子尺度结构的电学研究中，应该考虑到裸露纳米线的断裂足以产生丰富的微分电导特征。
Nanosized gap structures have been fabricated via electromigration-induced breaking of gold-palladium nanowires. The application of low breaking voltages resulted in gap junctions exhibiting single-electron tunneling signatures at low temperature (2K), which are attributed to the formation of metallic nanoclusters during the electromigration process. Strikingly, the I–V characteristics of most samples displayed a close similarity to those typically attributed to electrical transport through single molecules contacted by incorporation into electromigration gaps. The finding that the breaking of bare nanowires alone is sufficient to create rich differential conductance features should be taken into account in future electrical studies on molecular-scale structures.