An Aging-Resistant NAND Flash Memory Physical Unclonable Function
An Aging-Resistant NAND Flash Memory Physical Unclonable Function
复制标题
抗老化NAND闪存物理不可克隆功能
DOI：
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发表时间：
2020
影响因子：
3.1
通讯作者：
B. Ray
中科院分区：
文献类型：
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作者：
S. Sakib;A. Milenković;Md. Tauhidur Rahman;B. Ray
这篇文章展示了一种新的技术，用于产生抗老化，物理不可克隆功能（PUF）使用商业现成的NAND闪存芯片。该技术利用了一种新颖的“编程干扰”方法，使用一个单一的存储器页面来提取每个芯片所特有的固有工艺变化。此外，它采用了一种自适应可调的PUF生成方法，以减少老化对PUF精度的影响。利用几个商业闪存芯片的实验评估表明，所提出的技术，确保准确性，唯一性和随机性的PUF生成从一个单一的存储器页面至少1000 PUF生成操作。与现有的闪存PUF技术不同，所提出的技术不涉及复杂的存储器表征或冗长的后处理步骤，使其适用于广泛的资源约束系统。
This article demonstrates a novel technique for generating aging-resistant, physical unclonable function (PUF) using commercial off-the-shelf NAND flash memory chips. The technique utilizes a novel “program-disturb” method using a single memory page to extract the inherent process variations unique to each chip. In addition, it employs an adaptively tunable PUF generation method to reduce the aging effects on PUF accuracy. The experimental evaluation utilizing several commercial flash memory chips shows that the proposed technique ensures accuracy, uniqueness, and randomness of PUFs generated from a single memory page for at least 1000 PUF-generating operations. Unlike prior flash PUF techniques, the proposed technique does not involve complex memory characterization or lengthy postprocessing steps, making it suitable for a wide range of resource constraint systems.