Carrier concentration profiles across GaP grain boundaries observed by raman measurements
Carrier concentration profiles across GaP grain boundaries observed by raman measurements
复制标题
通过拉曼测量观察到的跨 GaP 晶界的载流子浓度分布
DOI：
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发表时间：
1988
期刊：
影响因子：
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通讯作者：
W. Siegel
中科院分区：
文献类型：
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作者：
G. Irmer;W. Siegel
对SSD法生长的n型和p型GaP的晶界进行了拉曼测量。所研究的高角度晶界都显示出一个中心载流子耗尽区(宽度约20μm)，这归因于掺杂耗尽。此外，它还存在大范围的载流子积累，但并不总是很明显。讨论了这些剖面形成的可能原因。
Raman measurements are performed on grain boundaries in n-type and p-type GaP grown by the SSD method. The high-angle grain boundaries investigated show all a central region of carrier depletion (width about 20 μm) which is attributed to dopant depletion. Beside it exist broad ranges of carrier accumulation not always clearly pronounced. Possible reasons of the formation of these profiles are discussed.