Light-anodization process for high-J/sub c/ micron and submicron superconducting junction and integrated circuit fabrication
Light-anodization process for high-J/sub c/ micron and submicron superconducting junction and integrated circuit fabrication
复制标题
用于高J/亚c/微米和亚微米超导结和集成电路制造的光阳极氧化工艺
DOI：
10.1109/tasc.2003.813652
复制
发表时间：
2003
影响因子：
1.8
通讯作者：
T. Duzer
中科院分区：
文献类型：
--
作者：
Xiaofan Meng;T. Duzer
我们开发了一种用于高临界电流密度(J/subc/)小结制造的新方法。关键步骤是光阳极氧化，在结区周围和结侧壁上形成Al/sub2/O/sub3//Nb/sub2/O/sub5/氧化物的薄双层。该阳极氧化环是一个很好的干法刻蚀停止，因此用于结接触的通孔可以大于结面积。在干法刻蚀和溅射过程中，阳极氧化环还可以保护结免受等离子体损伤；因此，它可以减少结的泄漏电流和临界电流扩散。与化学机械抛光方法相比，该新技术非常简单且成本效益高。它只需要一个额外的掩模和工艺步骤。我们已经用该技术制备了高J/subc/亚微米Nb/Al-AlO/subx//Nb隧道结，具有很低的临界电流扩散。利用这一技术，我们还制作了NB SQUID和各种NB数字集成电路。
We have developed a new approach for high critical current density (J/sub c/) small junction fabrication. The key step is light anodization that forms a thin double-layer of Al/sub 2/O/sub 3//Nb/sub 2/O/sub 5/ oxides around the junction area and on the sidewalls of the junction. This anodization ring is a good dry-etch stop, so the via for the junction contact can be larger than the junction area. The anodization ring can also protect the junction from plasma damage during dry etching and sputtering steps; therefore, it can reduce the junction leakage current and critical-current spread. The new technique is very simple and cost effective compared with the CMP approach. It needs only one additional mask and process step. We have used the technique to fabricate high-J/sub c/ submicron Nb/Al-AlO/sub x//Nb tunnel junctions with very low critical-current spreads. Using this technique, we have also fabricated Nb SQUID's and various Nb digital IC's.