Formation of nanohole for positioning of colloidal quantum dot
Formation of nanohole for positioning of colloidal quantum dot
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DOI：
10.7567/jjap.53.06jf08
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发表时间：
2014-05
影响因子：
1.5
通讯作者：
K. Mukai;T. Sakai;A. Hirota;S. Nakashima
中科院分区：
文献类型：
--
作者：
K. Mukai;T. Sakai;A. Hirota;S. Nakashima
我们提出了一种利用扫描探针显微镜（SPM）在氧化处理过的硅衬底上的纳米孔定位胶体量子点（QD）的方法。我们研究了两种形成纳米孔的方法。使用氧化物作为正掩模，我们发现不可能制造QD直径和深度的孔，因为在现有氧化物下氧化不深入进行。使用氧化物作为负掩模，我们发现，量子点大小的孔的制造是通过干法刻蚀实现的。SPM观测表明，可以使用纳米孔阵列捕获单层PbS量子点。
We propose a method of positioning a colloidal quantum dot (QD) using a nanohole on a Si substrate processed by oxidation with scanning probe microscope (SPM). We investigated two methods for the formation of the nanohole. Using oxide as a positive mask, we found that the hole of QD diameter and depth was not possible to fabricate since the oxidation does not progress deeply under the existing oxide. Using oxide as a negative mask, we found that the fabrication of a QD-size hole is achievable by dry etching. SPM observations suggest that a single sheet of PbS QDs can be trapped using a nanohole array.