Gain limits of a Thick GEM in high-purity Ne, Ar and Xe

Gain limits of a Thick GEM in high-purity Ne, Ar and Xe
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DOI:
10.1088/1748-0221/5/05/p05008
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发表时间:
2010-01
影响因子:
1.3
通讯作者:
J. Miyamoto;A. Breskin;V. Peskov
J. Miyamoto;A. Breskin;V. Peskov
中科院分区:
工程技术4区
文献类型:
--
作者:
J. Miyamoto;A. Breskin;V. Peskov

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本文研究了厚气电子倍增器(THGEM)雪崩电荷增益与填充气体Ne、Ar和Ar纯度的关系。在标准条件(大气压,室温)下用α粒子测量的增益,在用非蒸发吸气剂净化的气体中被发现大大下降。另一方面,少量的N2混合物的惰性气体导致高可达到的增益。这些结果在惰性气体中气体雪崩探测器的操作中具有普遍意义,特别是对于稀有事件的两相低温探测器。
The dependence of the avalanche charge gain in Thick Gas Electron Multipliers (THGEM) on the purity of Ne, Ar and Xe filling gases was investigated. The gain, measured with alpha-particles in standard conditions (atmospheric pressure, room temperature), was found to considerably drop in gases purified by non-evaporable getters. On the other hand, small N2 admixtures to noble gases resulted in high reachable gains. The results are of general relevance in the operation of gas-avalanche detectors in noble gases, particularly that of two-phase cryogenic detectors for rare events.