Precursor Parameter Identification for Insulated Gate Bipolar Transistor (IGBT) Prognostics
Precursor Parameter Identification for Insulated Gate Bipolar Transistor (IGBT) Prognostics
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DOI：
10.1109/tr.2009.2020134
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发表时间：
2009-06-01
影响因子：
5.9
通讯作者：
Pecht, Michael
中科院分区：
文献类型：
--
作者：
Patil, Nishad;Celaya, Jose;Pecht, Michael
已确定的前兆参数，使绝缘栅双极晶体管（IGBT）的预后方法的发展。使用晶体管测试板对IGBT进行热过应力测试，直到器件闩锁。集电极-发射极电流、晶体管外壳温度、瞬态和稳态栅极电压以及瞬态和稳态集电极-发射极电压在测试过程中进行现场监测。对IGBT进行老化前和老化后的特性测试。观察到老化的部件在电容-电压（C-V）测量中具有偏移，作为栅极氧化物中的捕获电荷的结果。集电极-发射极导通电压V-CE（ON）随着老化而降低。的V-CE（ON）的减少被认为是相关的管芯附着退化，如通过扫描声学显微镜（SAM）分析所观察到的。观察到集电极-发射极电压和晶体管关断时间是闩锁的前兆参数。这些前兆参数的监测将使IGBT故障的预测方法的发展。预测方法将涉及趋势前兆数据，并使用故障模型的物理学来预测这些器械的剩余使用寿命。
Precursor parameters have been identified to enable development of a prognostic approach for insulated gate bipolar transistors (IGBT). The IGBT were subjected to thermal over-stress tests using a transistor test board until device latch-up. The collector-emitter current, transistor case temperature, transient and steady state gate voltages, and transient and steady state collector-emitter voltages were monitored in-situ during the test. Pre- and post-aging characterization tests were performed on the IGBT. The aged parts were observed to have shifts in capacitance-voltage (C-V) measurements as a result or trapped charge in the gate oxide. The collector-emitter ON voltage V-CE(ON) showed a reduction with aging. The reduction in the V-CE(ON) was found to be correlated to die attach degradation, as observed by scanning acoustic microscopy (SAM) analysis. The collector-emitter voltage, and transistor turn-off time were observed to be precursor parameters to latch-up. The monitoring of these precursor parameters will enable the development of a prognostic methodology for IGBT failure. The prognostic methodology will involve trending precursor data, and using physics of failure models for prediction of the remaining useful life of these devices.