Enhancement of critical current density of YBCO films by introduction of artificial pinning centers due to the distributed nano-scaled Y2O3 islands on substrates
Enhancement of critical current density of YBCO films by introduction of artificial pinning centers due to the distributed nano-scaled Y2O3 islands on substrates
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DOI：
10.1016/j.physc.2004.01.157
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发表时间：
2004-10-01
影响因子：
1.7
通讯作者：
Horii, S
中科院分区：
文献类型：
--
作者：
Matsumoto, K;Horide, T;Horii, S
我们在c轴取向的YBa2Cu3O7-x(YBCO)薄膜中引入了高密度伸展晶体缺陷，这导致了量子化涡旋的人工钉扎中心。在薄膜沉积过程中，在SrTiO_3(100)衬底上制备了分布的纳米Y2O_3岛，形成了垂直于薄膜表面的晶体缺陷。通过选择沉积条件，制备了高度约为3 nm、直径约为25 nm的Y_2O_3纳米岛，密度控制在89~212µm(-2)之间。在具有扩展缺陷的SrTiO_3衬底上生长的YBCO薄膜的J(C)S比没有缺陷的YBCO薄膜提高了约150%。(C)2004爱思唯尔B.V.保留所有权利。
We introduced high-density extended crystalline defects, which result in artificial pinning centers of the quantized vortices, into c-axis oriented YBa2Cu3O7-x, (YBCO) films. The crystalline defects created perpendicular to the film surface were derived, during the film deposition process, by the distributed nano-sized Y2O3 islands prepared on SrTiO3 (1 0 0) substrates. The Y2O3 nano-islands were approximately 3 urn in height and 25 nm in diameter and the density was controlled from about 89 to 212 mum(-2) by choosing the Y2O3 deposition condition. J(c)s of YBCO films grown on SrTiO3 substrates with the extended defects were increased by about 150% higher than those of YBCO films without the defects. (C) 2004 Elsevier B.V. All rights reserved.