Voltage control of magnetocrystalline anisotropy in ferromagnetic-semiconductor-piezoelectric hybrid structures
Voltage control of magnetocrystalline anisotropy in ferromagnetic-semiconductor-piezoelectric hybrid structures
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DOI：
10.1103/physrevb.78.085314
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发表时间：
2008-08-01
影响因子：
3.7
通讯作者：
Jungwirth, T.
中科院分区：
文献类型：
--
作者：
Rushforth, A. W.;De Ranieri, E.;Jungwirth, T.
我们展示了电压控制的（Ga，Mn）As器件的磁各向异性结合到压电换能器。单轴应变的应用导致磁易轴的大的重新取向，这是由各向异性磁阻测量检测。计算的基础上的平均场动力学交换模型（Ga，Mn）As提供了一个微观的理解所测量的效果。所报道的单轴面内各向异性的平滑电压控制、电诱导磁化切换和各向异性磁阻的非常规结晶组分的检测说明了我们的多铁性系统在提供器件功能和稀磁半导体中的微磁和磁输运现象的研究中的通用效用。
We demonstrate voltage control of the magnetic anisotropy of a (Ga,Mn)As device bonded to a piezoelectric transducer. The application of a uniaxial strain leads to a large reorientation of the magnetic easy axis, which is detected by anisotropic magnetoresistance measurements. Calculations based on the mean-field kinetic-exchange model of (Ga,Mn)As provide a microscopic understanding of the measured effect. The reported smooth voltage control of the uniaxial in-plane anisotropy, electrically induced magnetization switching, and detection of unconventional crystalline components of the anisotropic magnetoresistance illustrate the generic utility of our multiferroic system in providing device functionalities and in the research of micromagnetic and magnetotransport phenomena in diluted magnetic semiconductors.