Crack-Free Growth and Transfer of Continuous Monolayer Graphene Grown on Melted Copper
Crack-Free Growth and Transfer of Continuous Monolayer Graphene Grown on Melted Copper
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DOI：
10.1021/cm501911g
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发表时间：
2014-09-09
影响因子：
8.6
通讯作者：
Warner, Jamie H.
中科院分区：
文献类型：
--
作者：
Fan, Ye;He, Kuang;Warner, Jamie H.
具有大畴尺寸的单层石墨烯可以通过使用处于其熔融状态的Cu催化剂的化学气相沉积来生长。然而，将其扩展到厘米级的完全连续的石墨烯片是具有挑战性的，因为在快速冷却时会引起裂纹、裂口和撕裂。确定了禁止完全连续的石墨烯片的各种问题并提出了解决方案。这些包括（i）开发一种新的两阶段CVD生长工艺，该工艺填充在冷却时形成的裂纹和孔;（ii）适当选择W而不是Mo的底层润湿基底，这会导致孔;以及（iii）一种新的电化学转移方法，该方法去除W，然后去除Cu，以使无裂纹的石墨烯片能够有效地转移到硅晶片上。我们的研究结果提供了重要的解决方案，以相关的挑战，高品质的单层石墨烯的合成和转移生长在熔融铜催化剂的电子应用。
Monolayer graphene with large domain sizes can be grown by chemical vapor deposition using a Cu catalyst in its molten state. However, extending this to fully continuous sheets of graphene on the centimeter scale is challenging, because of cracks, rips, and tears that are induced upon rapid cooling. The various issues that prohibit fully continuous graphene sheets are identified and solutions presented. These include (i) developing a novel two-stage CVD growth process that fills in the cracks and holes formed upon cooling; (ii) appropriate choice of underlying wetting substrate of W, instead of Mo, which causes holes; and (iii) a new electrochemical transfer method that removes W and then Cu to enable the efficient transfer of crack-free graphene sheets onto silicon wafers. Our results provide important solutions to challenges related to the synthesis and transfer of high-quality monolayer graphene grown on molten Cu catalysts for electronic applications.