Analysis and Modeling of Drain-Induced Barrier Lowering Variation Induced by Random Dopants in Nanometer MOSFET Channel
Analysis and Modeling of Drain-Induced Barrier Lowering Variation Induced by Random Dopants in Nanometer MOSFET Channel
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DOI：
10.1166/nnl.2017.2435
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发表时间：
2017-08
影响因子：
--
通讯作者：
Wei-feng Lü;Guang-yi Wang;Ling-ling Sun
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文献类型：
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作者：
Wei-feng Lü;Guang-yi Wang;Ling-ling Sun
漏致势垒降低（DIBL）变化是纳米金属氧化物半导体场效应晶体管（MOSFET）的集成器件和电路设计中的重大挑战。本文分析并提出了一个紧凑的模型，以正确地描述DIBL变化的随机掺杂剂在22-nm MOSFET沟道中考虑二阶效应时，使用变化的传播（传播）的方法。该模型使用蒙特卡罗模拟进行了验证，并捕获DIBL的统计分布非常好。我们的模型和模拟都显示了DIBL的3σ设计裕度，由于沟道掺杂约为31.5 mV/V。所提出的统计建模方法为纳米CMOS电路的工艺变化感知设计提供了一个新的视角。
Drain-induced barrier lowering (DIBL) variation is a significant challenge in integrated device and circuit designs for nanometer metal-oxide-semiconductor field effect transistors (MOSFETs). This letter analyzed and proposed a compact model to correctly describe DIBL variation induced by random dopants in a 22-nm MOSFET channel considering the second-order effect when using propagation of variation (POV) methodology. The model was validated using a Monte Carlo simulation and captured DIBL's statistical distribution very well. Our model and simulation both revealed a 3σ design margin for DIBL due to channel doping is around 31.5 mV/V. The presented statistical modeling approach gives a new perspective for the process-variation-aware design of the nanometer CMOS circuit.