Near-infrared optical absorption enhanced in black silicon via Ag nanoparticle-induced localized surface plasmon.
Near-infrared optical absorption enhanced in black silicon via Ag nanoparticle-induced localized surface plasmon.
复制标题
通过银纳米粒子诱导的局域表面等离子体增强黑硅的近红外光吸收
DOI：
10.1186/1556-276x-9-519
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发表时间：
2014
影响因子：
--
通讯作者：
Chen Z
中科院分区：
文献类型：
--
作者：
Zhang P;Li S;Liu C;Wei X;Wu Z;Jiang Y;Chen Z
由于银纳米颗粒在黑硅内部诱导的局域表面等离子体（LSP）效应，黑硅在近红外波段（1100 ~ 2500 nm）的光吸收显著增强。具有Ag纳米颗粒的黑硅在紫外到近红外（UV-VIS-NIR，250至2，500 nm）上显示出比通过化学蚀刻或反应离子蚀刻制造的黑硅高得多的吸收。在NIR范围内（820至2,500 nm）的最大吸收甚至增加到93.6%。在近红外波段的高吸收使得LSP增强黑硅成为一种潜在的用于近红外敏感光电器件的材料。78.67.Bf; 78.30.Fs; 78.40.- q; 42.70.Gi
Due to the localized surface plasmon (LSP) effect induced by Ag nanoparticles inside black silicon, the optical absorption of black silicon is enhanced dramatically in near-infrared range (1,100 to 2,500 nm). The black silicon with Ag nanoparticles shows much higher absorption than black silicon fabricated by chemical etching or reactive ion etching over ultraviolet to near-infrared (UV-VIS-NIR, 250 to 2,500 nm). The maximum absorption even increased up to 93.6% in the NIR range (820 to 2,500 nm). The high absorption in NIR range makes LSP-enhanced black silicon a potential material used for NIR-sensitive optoelectronic device. 78.67.Bf; 78.30.Fs; 78.40.-q; 42.70.Gi