Pressure-Dependent ZnO Nanocrsytal Growth in a Chemical Vapor Deposition Process
Pressure-Dependent ZnO Nanocrsytal Growth in a Chemical Vapor Deposition Process
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DOI：
10.1021/jp048602i
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发表时间：
2004-06
影响因子：
3.3
通讯作者：
B. Zhang;N. Binh;K. Wakatsuki;Y. Segawa;Y. Yamada;N. Usami;M. Kawasaki;H. Koinuma
中科院分区：
文献类型：
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作者：
B. Zhang;N. Binh;K. Wakatsuki;Y. Segawa;Y. Yamada;N. Usami;M. Kawasaki;H. Koinuma
采用金属有机化学气相沉积方法，在10 ~ 0.06 Torr的生长压力范围内可选择性地制备ZnO纳米棒、纳米管和纳米壁。不同的纳米结构的出现是由于不同的生长方式。用表面体积比解释了纳米结构形状随压力变化的变化。光致发光测量表明，在低压下生长有利于受体在ZnO中的掺入。
By using metalorganic chemical vapor deposition, ZnO nanorods, nanotubes, and nanowalls can be selectively obtained by adjusting the growth pressure from 10 to 0.06 Torr. The appearance of different nanostructures is due to different growth modes. The variation of nanostructure shape with change in pressure is explained in terms of surface-to-volume ratio. Photoluminescence measurements show that growth at low-pressure facilitates the incorporation of acceptors in ZnO.