Bottom-contact fullerene C60 thin-film transistors with high field-effect mobilities
Bottom-contact fullerene C60 thin-film transistors with high field-effect mobilities
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DOI：
10.1063/1.2959732
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发表时间：
2008-07-21
影响因子：
4
通讯作者：
Arakawa, Yasuhiko
中科院分区：
文献类型：
--
作者：
Kitamura, Masatoshi;Aomori, Shigeru;Arakawa, Yasuhiko
制备了底部接触结构的富勒烯C-60薄膜晶体管。寄生电阻的提取采用门控传输线法。漏极/源极电极由没有粘附层的单个Au层组成;沟道长度范围为5至40 μ m。饱和状态下的场效应迁移率与沟道长度略有关系，范围为2.45~3.23 cm（2）/V s。沟道长度为5 μ m的TFT的迁移率为3.23 cm（2）/Vs，是底部接触结构有机TFT中最高的。高迁移率是由于低寄生电阻。(C)2008年美国物理学会。
Fullerene C-60 thin-film transistors (TFTs) with bottom-contact structure have been fabricated. The parasitic resistance was extracted using gated-transmission line method. The drain/source electrodes consisted of a single Au layer with no adhesion layer; the channel lengths ranged from 5 to 40 mu m. The field-effect mobilities in the saturation regime slightly depended on the channel length, ranging from 2.45 to 3.23 cm(2)/V s. The mobility of 3.23 cm(2)/V s was obtained from the TFT with a channel length of 5 mu m and is the highest in organic TFTs with bottom-contact structure. The high mobility is due to the low parasitic resistance. (C) 2008 American Institute of Physics.