Air-stable and balanced split-gate organic transistors
Air-stable and balanced split-gate organic transistors
复制标题
DOI：
10.1016/j.orgel.2018.09.022
复制
发表时间：
2018-12-01
影响因子：
3.2
通讯作者：
Kim, Jae-Joon
中科院分区：
文献类型：
--
作者：
Yoo, Hocheon;Nakano, Masahiro;Kim, Jae-Joon
双极性有机电子学作为实现互补电路的一种简单的替代技术已经引起了人们的兴趣。虽然实际应用需要在空气中稳定运行，但大多数关于双极性有机电子学的先前研究报告的结果仅在高真空或N-2气氛中测量。这是因为当暴露在空气中时，双极性性质转变为不对称p型主导或单极p型特征。环境大气对双极性有机半导体影响的基础研究很少。在本文中，我们用聚{[n， n '-双（3-十二烷基五烷基）-萘[2,3-b: 6,7b']二噻吩-4,5,9,10-四羧基二酰亚胺-2,7-二基]-盐-5,5'-（2,2'-二噻吩）}（PNDTI-BT-DP）在环境空气下证明了具有平衡p/n特性的双极性otft。基于XPS、UPS和不同气氛下的电特性分析，我们得出结论：相对于Au接触电极，PNDTIBT- DP比双平面电荷注入的目标值高0.45 eV。当PNDTI-BT-DP薄膜暴露在环境空气中时，其能级上升了0.45 eV，导致电学性能发生变化。作为概念验证应用，我们展示了空气稳定的分栅otft，它可以作为基于电气控制的单极p型或n型器件运行。最后，我们报告的结果表明，在类似于120小时的大气暴露后，p型或n型操作的器件特性都保持不变。
Ambipolar organic electronics have been gaining interest as a simple alternative technology for implementing complementary-like circuits. Although practical applications require stable operation in the air, most previous studies on ambipolar organic electronics have reported results measured in high vacuum or N-2 atmosphere only. This is because ambipolar properties change to asymmetric p-type dominant or unipolar p-type characteristics when exposed to air. Little effort has been put into the fundamental investigation of the effects of the environmental atmosphere on ambipolar organic semiconductors. In this paper, we demonstrate ambipolar OTFTs with balanced p/n characteristics under ambient air using poly{[N, N'-bis(3-decylpentadecyl)-naphtho[2,3-b: 6,7b'] dithiophene-4,5,9,10-tetracarboxidiimide-2,7-diyl]-alt-5,5'-(2,2'-bithiophene)} (PNDTI-BT-DP). Based on the analysis using XPS, UPS, and electrical characterizations at various atmosphere, we concluded that the PNDTIBT- DP has 0.45 eV higher than the target value for ambiplar charge injections with respect to Au contact electrode. The energy level of the PNDTI-BT-DP was up-shifted by 0.45 eV when the film was exposed to ambient air, which resulted in a change in the electrical properties. As a proof-of-concept application, we demonstrate the air-stable split-gate OTFTs that operate as either a unipolar p-or n-type device based on electrical control. Finally, we report results showing that the device characteristics for both p-or n-type operations were maintained after similar to 120 h of atmospheric exposure.