Effect of dislocation walls on the polarization switching of a ferroelectric single crystal
Effect of dislocation walls on the polarization switching of a ferroelectric single crystal
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DOI：
10.1063/1.4809945
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发表时间：
2013-06
影响因子：
4
通讯作者：
Honghui Wu;Jie Wang;S. Cao;Tong-Yi Zhang
中科院分区：
文献类型：
--
作者：
Honghui Wu;Jie Wang;S. Cao;Tong-Yi Zhang
通过相场模拟研究位错壁对铁电单晶的畴结构和极化切换行为的影响。模拟结果表明，畴结构和偏振切换行为高度依赖于位错壁中的位错间距。如果在高温下引入适当的位错密度，可以通过降低矫顽场并同时增强剩余极化来大大提高铁电性能。相场模拟还深入了解了偏振切换的机制。
Phase field simulations were conducted to study the influence of dislocation walls on the domain configuration and polarization switching behavior of a ferroelectric single crystal. The simulation results show that the domain configuration and polarization switching behavior depend highly on the dislocation spacing in the dislocation wall. The ferroelectric properties can be greatly improved by reducing the coercive field and meanwhile enhancing the remanent polarization if an appropriate density of dislocations is introduced at high temperature. The phase field simulations also put insights into the mechanism of polarization switching.