Electroresistance Effect in Gold Thin Film Induced by Ionic-Liquid-Gated Electric Double Layer
Electroresistance Effect in Gold Thin Film Induced by Ionic-Liquid-Gated Electric Double Layer
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DOI：
10.1143/apex.5.023002
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发表时间：
2012-01
影响因子：
2.3
通讯作者：
H. Nakayama;Jianting Ye;Takashi Ohtani;Y. Fujikawa;K. Ando;Y. Iwasa;E. Saitoh
中科院分区：
文献类型：
--
作者：
H. Nakayama;Jianting Ye;Takashi Ohtani;Y. Fujikawa;K. Ando;Y. Iwasa;E. Saitoh
利用离子液体栅控双电层晶体（EDLTs）在金属薄膜中检测电阻效应。我们观察到Au薄膜电阻的可逆调制。在这个系统中，我们发现，双电层作为一个纳米间隙电容器与27（-25）MV cm-1的电场，仅施加1.7 V的正（负）栅极电压。实验结果表明，离子液体门控EDLT技术可用于控制金属表面电子态。
Electroresistance effect was detected in a metallic thin film using ionic-liquid-gated electric-double-layer transistors (EDLTs). We observed reversible modulation of the electric resistance of a Au thin film. In this system, we found that an electric double layer works as a nanogap capacitor with 27 (-25) MV cm-1 of electric field by applying only 1.7 V of positive (negative) gate voltage. The experimental results indicate that the ionic-liquid-gated EDLT technique can be used for controlling the surface electronic states on metallic systems.