Stress tuning of the metal-insulator transition at millikelvin temperatures
Stress tuning of the metal-insulator transition at millikelvin temperatures
复制标题
毫开尔文温度下金属-绝缘体转变的应力调整
DOI：
10.1103/physrevlett.48.1284
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发表时间：
1982
影响因子：
8.6
通讯作者：
R. Bhatt
中科院分区：
文献类型：
--
作者：
M. Paalanen;T. Rosenbaum;G. Thomas;R. Bhatt
通过施加单轴应力，获得了毫开温度下 Si:P 中金属-绝缘体转变的高分辨率扫描。解决了急剧但连续的金属-绝缘体转变，电导率低于莫特的“最小”值 σ_M。这些测量与之前的低分辨率实验顺利结合，排除了 σ_M 处的任何不连续性。可重复的批判行为与现有本地化缩放理论的预测不一致。
A high-resolution scan of the metal-insulator transition in Si:P at millikelvin temperatures has been obtained by applying uniaxial stress. A sharp, but continuous, metal-insulator transition is resolved, with conductivities below Mott's "minimum" value σ_M. These measurements join smoothly with previous low-resolution experiments, ruling out any discontinuity at σ_M. The reproducible critical behavior disagrees with predictions of existing scaling theories of localization.