Device applications of interband tunneling structures with one, two, and three dimensions
Device applications of interband tunneling structures with one, two, and three dimensions
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一维、二维、三维带间隧道结构的器件应用
DOI：
10.1063/1.354116
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发表时间：
1993
影响因子：
3.2
通讯作者：
A. O'Neill
中科院分区：
文献类型：
--
作者：
J. Gilman;A. O'Neill
在Esaki隧道二极管理论的基础上，系统地研究了一维、二维和三维（1D、2D、3D）状态间的带间隧道效应。九种可能的组合中的每一种都给出了I - V特性。更深入地处理了三个系统：2D - 3D隧道，其中与实验数据进行了比较，2D - 2D隧道，其中看到了对传统隧道二极管特性的改进，以及2D - 1D隧道，其中讨论了三稳器件的前景。
A systematic study of interband tunneling between states of one, two, and three dimensions (1D, 2D, 3D) is presented based on the theory of the Esaki tunnel diode, modified to take interdimensional tunneling into account. I‐V characteristics are given for each of the nine possible combinations. Three systems are dealt with in greater depth: 2D‐3D tunneling, where a comparison with experimental data is made, 2D‐2D tunneling, where improvements over the conventional tunnel diode characteristic are seen, and 2D‐1D tunneling where the prospect of a tristable device is discussed.