Ferromagnetic CrxTi1−xN solid solution nitride thin films grown by pulsed laser deposition and their magnetoresistance
Ferromagnetic CrxTi1−xN solid solution nitride thin films grown by pulsed laser deposition and their magnetoresistance
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DOI：
10.1063/1.2776853
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发表时间：
2007-10
影响因子：
4
通讯作者：
K. Inumaru;Kunihiko Koyama;Y. Miyaki;Kazuma Tanaka;S. Yamanaka
中科院分区：
文献类型：
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作者：
K. Inumaru;Kunihiko Koyama;Y. Miyaki;Kazuma Tanaka;S. Yamanaka
在氮自由基照射下，通过脉冲激光沉积在MgO（001）上生长了CrxTi 1 −xN外延氮化物薄膜，并研究了它们的磁性和输运性质，这是由于磁性计算指出CrN与庞磁阻氧化物的母体化合物LaMnO 3的相似性。薄膜的铁磁性为0.28 × 10 ~（-5），TC在x=0.5时达到最大值（140 K）。当x超过0.5（x=0.58）时，铁磁性完全消失。当x=0.5时，氮化膜表现出较大的磁电阻（5 T时为6%~ 7%），在130 K时达到最大值。
Epitaxial nitride films of CrxTi1−xN were grown on MgO (001) by pulsed laser deposition under nitrogen radical irradiation, and their magnetic and transport properties were investigated, which was motivated by calculations on magnetism pointing out similarities of CrN to LaMnO3, the parent compound of colossal magnetoresistance oxides. The films showed ferromagnetism for 0.28⩽x⩽0.5 and the TC showed a maximum (140K) at x=0.5. When x exceeded 0.5(x=0.58) ferromagnetism disappeared completely. At x=0.5, the nitride film showed a large magnetoresistance (6%–7% at 5T), which had a maximum at 130K.