Photoelectron Emission of TiN-coated Alumina Excited by Ultraviolet Light
Photoelectron Emission of TiN-coated Alumina Excited by Ultraviolet Light
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紫外光激发 TiN 涂层氧化铝的光电子发射
DOI：
10.1109/deiv.2006.357246
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发表时间：
2006
期刊：
影响因子：
--
通讯作者：
S. Kobayashi
中科院分区：
文献类型：
--
作者：
Suharyanto;T. Okano;S. Michizono;Y. Saito;Tumiran;Y. Yamano;S. Kobayashi
真空中固体绝缘子的表面击穿是由表面充电引发的，而表面充电受绝缘子的电子发射特性的强烈影响。在这项研究中，光电子发射的氧化铝激发真空紫外光观察使用电子发射显微镜（EEM）。结果表明，纯度为99.7%的氧化铝陶瓷（HA997）、蓝宝石（单晶氧化铝）和TiN涂层蓝宝石的光电子发射是在其表面孤立的单个位置间歇地发生的，而导电材料的光电子发射是连续的。绝缘体样品的离散发射可能是由于电子发射后表面正电荷的作用。结果表明，HA997的光电子发射位数高于蓝宝石。由于TiN通常被涂覆在氧化铝上以降低SEE系数，因此还研究了TiN涂覆的蓝宝石的光电子发射位点。结果表明，这种蓝宝石薄膜的发光点数目与未镀膜蓝宝石的发光点数目基本相同。此外，还讨论了光电子发射性质与表面充电的关系
Surface breakdown of solid insulator in vacuum is initiated by surface charging which is strongly influenced by electron emission properties of the insulator. In this study, photoelectron emission of alumina exited by vacuum ultraviolet light is observed using an electron emission microscope (EEM). As a result, photoelectron emissions of 99.7% purity alumina ceramic named HA997, sapphire (single crystal alumina) and TiN-coated sapphire intermittently took place at isolated individual sites on its surface, while that of conductive material is a continuous emission. The discrete emission of the insulator samples is probably caused by the positive surface charging after the electron emission. It is found that the number of the photoelectron emission sites of HA997 is higher than that of sapphire. Since TiN is often coated on alumina for reducing SEE coefficients, photoelectron emission sites of TiN-coated sapphire were also investigated. The results show that the number of the emission sites is almost same as that of uncoated sapphire. Furthermore, the relationship between photoelectron emission properties and surface charging is also discussed