Defect generation in p-MOSFETs under negative-bias stress: An experimental perspective
Defect generation in p-MOSFETs under negative-bias stress: An experimental perspective
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DOI：
10.1109/tdmr.2007.912261
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发表时间：
2008-03-01
影响因子：
2
通讯作者：
Alam, Muhammad Ashraful
中科院分区：
文献类型：
--
作者：
Mahapatra, Souvik;Alam, Muhammad Ashraful
本文对我们在负偏压温度不稳定性（NBTI）测量和分析方面的工作（2002-2007）进行了重点回顾。使用适当的交叉参考其他已发表的工作，应力条件，表征技术，和栅氧化层工艺测量NBTI参数的影响进行了审查。NBTI的测量时间，偏置和温度依赖性，这是在已发表的文献中观察到的大分散，仔细分析。提出并讨论了NBTI物理机制的一般框架。目前缺乏正确认识的问题也得到了强调。
In this paper, a focused review is made of our previously reported (2002-2007) work on negative bias temperature instability (NBTI) measurement and analysis. Using suitable cross-reference to other published work, the impacts of stress condition, characterization technique, and gate-oxide process on measured NBTI parameters are reviewed. The large scatter of measured time, bias, and temperature dependencies of NBTI, which are observed in published literature, is carefully analyzed. A common framework for NBTI physical mechanism is suggested and discussed. Issues lacking proper understanding at present are also highlighted.