Effect of rapid thermal annealing on radiation hardening of MOS devices
Effect of rapid thermal annealing on radiation hardening of MOS devices
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DOI：
10.1109/23.488764
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发表时间：
1995-12
影响因子：
1.8
通讯作者：
O. Flament;J. Leray;F. Martin;E. Orsier;J. Pelloie;R. Truche;R. Devine
中科院分区：
文献类型：
--
作者：
O. Flament;J. Leray;F. Martin;E. Orsier;J. Pelloie;R. Truche;R. Devine
研究了快速热退火（RTA）处理对MOS器件抗辐射性能的影响，并与传统的热处理工艺进行了比较。在RTA的情况下，氧化物捕获的电荷被发现取决于：（i）预期的退火温度。数据是在良好的协议与最近开发的模型的氧向外扩散，（ii）整个晶片的位置与径向依赖。结果可能与热梯度引起的应力有关。
The influence of RTA (Rapid Thermal Anneal) treatment on MOS radiation hardness is demonstrated and compared with classical furnace treatment. In the case of the RTA, the oxide trapped charge is found to depend on: (i) the anneal temperature as expected. Data are in good agreement with a recently developed model of oxygen out-diffusion, (ii) the location across the wafer with a radial dependence. Results could be related to stress induced by thermal gradient.