Recipe for higher order topology on the triangular lattice
Recipe for higher order topology on the triangular lattice
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DOI：
10.1103/physrevb.107.115130
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发表时间：
2022-07
影响因子：
3.7
通讯作者：
P. Eck;Yuan Fang;D. Di Sante;G. Sangiovanni;Jennifer Cano
中科院分区：
文献类型：
--
作者：
P. Eck;Yuan Fang;D. Di Sante;G. Sangiovanni;Jennifer Cano
我们提出了一个配方的电子二维高阶拓扑绝缘体（HOTI）的三角晶格，可以实现在一个大家庭的材料。基本成分是镜像对称破缺，它允许有限的四极矩和平凡的$\mathbb{Z}_2$指数。自旋-轨道耦合和对称性破缺项之间的竞争产生了四个拓扑上不同的阶段; HOTI阶段出现时，对称性破缺占主导地位，包括在没有自旋-轨道耦合。我们确定锌/金刚石型衬底（111）表面上的三角形单层吸附物体系为理想的材料平台，并预测了SiC上$X=$（Al，B，Ga）的HOTI相。
We present a recipe for an electronic 2D higher order topological insulator (HOTI) on the triangular lattice that can be realized in a large family of materials. The essential ingredient is mirror symmetry breaking, which allows for a finite quadrupole moment and trivial $\mathbb{Z}_2$ index. The competition between spin-orbit coupling and the symmetry breaking terms gives rise to four topologically distinct phases; the HOTI phase appears when symmetry breaking dominates, including in the absence of spin-orbit coupling. We identify triangular monolayer adsorbate systems on the (111) surface of zincblende/diamond type substrates as ideal material platforms and predict the HOTI phase for $X=$(Al,B,Ga) on SiC.